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HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3
Typical Performance Curves
(Continued)
1000
100
V GS = 10V
T C = 25 o C
FOR TEMPERATURES
ABOVE 25 o C DERATE PEAK
CURRENT AS FOLLOWS:
175 - T C
I = I 25
150
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
10 1
t, PULSE WIDTH (s)
FIGURE 4. PEAK CURRENT CAPABILITY
1000
T J = MAX RATED
T C = 25 o C
300
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
100
100
10
100 μ s
1ms
STARTING T J = 150 o C
STARTING T J = 25 o C
OPERATION IN THIS
AREA MAY BE
LIMITED BY r DS(ON)
V DSS(MAX) = 100V
10ms
1
1
10
100
200
10
0.001
0.01
0.1
1
V DS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
100
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
100
V GS = 6V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
175 o C
80
V GS = 20V
80
V DD = 15V
60
40
V GS = 10V
V GS = 7V
V GS = 5V
60
40
20
0
0
1
2
3
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
T C = 25 o C
4 5 6
7
20
0
0
1.5
25 o C
3.0
4.5
-55 o C
6.0
7.5
V DS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
?2001 Fairchild Semiconductor Corporation
V GS , GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Rev. C0
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相关代理商/技术参数
HUF75639P3 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFETN CH100V56ATO-220AB 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET,N CH,100V,56A,TO-220AB
HUF75639P3 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
HUF75639P3_F102 制造商:Fairchild Semiconductor Corporation 功能描述:
HUF75639P3_NL 制造商:Fairchild Semiconductor Corporation 功能描述:
HUF75639P3_Q 功能描述:MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUF75639S3 功能描述:MOSFET TO-262 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
HUF75639S3_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
HUF75639S3R4851 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET